Carrier-Controlled Ferromagnetism inSrTiO3

Carrier-Controlled Ferromagnetism in SrTiO3

SrTiO3 Pouya Moetakef, James R. Williams, Daniel G. Ouellette, Adam P. Kajdos, David Goldhaber-Gordon, S. James Allen, and Susanne Stemmer* Materials Department, University of California, Santa Barbara, California 93106-5050, USA Department of Physics, Stanford University, Stanford, California 94305-4045, USA Department of Physics, University of California, Santa Barbara, California 93106-9530,...

Carrier-concentration-induced ferromagnetism in PbSnMnTe.

The influence of charge-carrier concentration on the magnetic properties of the semimagnetic semiconductor [(PbTe)l-x(SnTe)x]l-y[MnTe]y (x=0.72, y=O.03) is reported. Magnetization, magnetic susceptibility, and specific heat have been measured. For carrier concentrations below p = 3 x 10 cm 3 the alloy is paramagnetic. For p ~ 3 x 1020 cm 3 an abrupt transition to a fer­ romagnetic phase is obse...

Carrier-induced ferromagnetism in p-Zn1ÀxMnxTe

We present a systematic study of the ferromagnetic transition induced by the holes in nitrogen doped Zn12xMnxTe epitaxial layers, with particular emphasis on the values of the Curie-Weiss temperature as a function of the carrier and spin concentrations. The data are obtained from thorough analyses of the results of magnetization, magnetoresistance, and spin-dependent Hall effect measurements. T...

Mechanism of carrier-induced ferromagnetism in magnetic semiconductors

Taking into account both random impurity distribution and thermal fluctuations of localized spins, we have performed a model calculation for the carrier (hole) state in Ga1−xMnxAs by using the coherent potential approximation (CPA). The result reveals that a p-hole in the band tail of Ga1−xMnxAs is not like a free carrier but is rather virtually bounded to impurity sites. The carrier spin stron...

Voltage-controlled ferromagnetism and magnetoresistance in LaCoO3/SrTiO3 heterostructures